MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

INTRACAVITY LOSS MODULATION OF GAINASP DIODE LASERSTSANG DZ; WALPOLE JN; GROVES SH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 120-122; BIBL. 10 REF.Article

BAND-TO-BAND AUGER EFFECT ON THE OUTPUT POWER SATURATION IN INGAASP LED'SSUGIMURA A.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 4; PP. 441-444; BIBL. 15 REF.Article

GAIN-CURRENT RELATION FOR IN_0.72GA_0.28AS_0.6P_0.4 LASERSDUTTA NK.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 55-60; BIBL. 39 REF.Article

INGAASP LASER DIODESOLSEN GH.1981; OPT. ENG.; ISSN 0091-3286; USA; DA. 1981; VOL. 20; NO 3; PP. 440-445; BIBL. 34 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article

CARRIER-PHONON INTERACTION IN 1.3- M QUATERNARY IN_0.72GA_0.28AS_0.6P_0.4SHAH J; ETIENNE B; LEHENY RF et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 9224-9226; BIBL. 6 REF.Article

PHOTOLUMINESCENCE INTENSITY IN INGAASP/INP DOUBLE-HETEROSTRUCTURESYAMAGUCHI A; KOMIYA S; UMEBU I et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 297-299; BIBL. 8 REF.Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF I_TH AND ETA _EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

ANOMALOUS EFFECT OF CARRIERS ON DIELECTRIC CONSTANT OF (IN, GA) (AS, P) LASERS OPERATING AT 1.3 MU M WAVELENGTHTURLEY SEH.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 590-592; BIBL. 6 REF.Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

INTEGRATED ARRAYS OF 1.3-MU M BURIED-CRESCENT LASERSTEMKIN H; LOGAN RA; VAN DER ZIEL JP et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 934-936; BIBL. 10 REF.Article

GAIN SPECTRA OF QUATERNARY SEMICONDUCTORSOSINSKI M; ADAMS MJ.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 229-236; BIBL. 56 REF.Article

HIGH-EFFICIENCY SHORT-CAVITY INGAASP LASER WITH ONE HIGH-REFLECTIVITY MIRRORLEE TP; BURRUS CA; LIU PL et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 805-806; BIBL. 3 REF.Article

RELIABILITY OF HIGH RADIANCE INGAASP/INP LED'S OPERATING IN THE 1.2-1.3 MU M WAVELENGTHYAMAKOSHI S; ABE M; WADA O et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 167-173; BIBL. 25 REF.Article

CALCUL DES DUREES DES PROCESSUS AUGER DANS LES SOLUTIONS SOLIDES INGAASP PGARBUZOV DZ; SOKOLOVA ZN; KHALFIN VB et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 315-319; BIBL. 10 REF.Article

VARIATION THERMIQUE DU SEUIL DE GENERATION DES HETEROSTRUCTURES DOUBLES INGAASP-GAAS (LAMBDA GEN=729 NM, T >OU= 300 K, J_SEUIL >OU= 5 X 10³ A/CM²)AREENT'EV IN; VAVILOVA LS; GARBUZOV DZ et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 5; PP. 843-846; BIBL. 15 REF.Article

LEO BANDWIDTH IMPROVEMENT BY BIPOLAR PULSINGDAWSON RW.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 7; PP. 697-699; BIBL. 5 REF.Article

CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN_0.72GA_0.28AS_0.6P_0.4DUTTA NK.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6095-6100; BIBL. 28 REF.Article

RECENT ADVANCES IN THE PERFORMANCE AND RELIABILITY OF INGAASP LED'S FOR LIGHTWAVE COMMUNICATION SYSTEMSSAUL RH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 285-295; BIBL. 86 REF.Article

AGING CHARACTERISTICS OF INGAASP/INP DFB LASERSNAKANO Y; MOTOSUGI G; YOSHIKUNI Y et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 437-438; BIBL. 4 REF.Article

CORRECTION TO "MONOLITHIC INTEGRATION OF INGAASP HETEROSTRUCTURE LASERS AND ELECTROOPTICAL DEVICES"WRIGHT PD; NELSON RJ; WILSON RB et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 6; PP. 1042Article